Multilevel resistive switching with ionic and metallic filaments
Multilevel resistive switching with ionic and metallic filaments
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DOI：
10.1063/1.3151822
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发表时间：
2009-06-08
影响因子：
4
通讯作者：
Guan, Weihua
中科院分区：
文献类型：
--
作者：
Liu, Ming;Abid, Z.;Guan, Weihua
通过在Ti/ZrO 2/n（+）-Si结构的ZrO 2氧化物层的一部分中掺杂Cu，制备了具有三种可区分电阻状态的电阻式随机存取存储器（ReRAM）器件。随温度变化的测量结果表明，由于离子陷阱控制的空间电荷限制的电流传导和金属桥的细丝形成在不同的电压。这些不同导电路径的并联形成和断裂被认为是导致具有大电阻比的多电平开关的原因，这可以用于建立具有变化容限的可靠的多电平ReRAM解决方案。
The resistive random access memory (ReRAM) device with three distinguishable resistance states is fabricated by doping Cu into a portion of the ZrO2 oxide layer of the Ti/ZrO2/n(+)-Si structure. The temperature-dependent measurement results demonstrate that filaments due to ionic trap-controlled space charge limited current conduction and metallic bridge are formed at different voltages. The formation and rupture of these different conducting filamentary paths in parallel are suggested to be responsible for the multilevel switching with the large resistance ratio, which can be used to establish a reliable multilevel ReRAM solution with variation tolerance.