Photoluminescence Quenching in Single-Layer MoS2 via Oxygen Plasma Treatment
Photoluminescence Quenching in Single-Layer MoS2 via Oxygen Plasma Treatment
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DOI：
10.1021/jp506964m
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发表时间：
2014-09-11
影响因子：
3.7
通讯作者：
Khondaker, Saiful I.
中科院分区：
文献类型：
--
作者：
Kang, Narae;Paudel, Hari P.;Khondaker, Saiful I.
通过氧等离子体处理产生的缺陷，我们证明了单层二硫化钼的光学性质的变化。我们发现，随着等离子体暴露时间的增加，光致发光（PL）从非常高的强度发展到完全淬灭，伴随着逐渐减少和扩大的二硫化钼拉曼模式，表明氧轰击后的二硫化钼晶格的畸变。X射线光电子能谱研究表明Mo6+峰的出现，表明MoO3无序区域的MoS2薄片的创建。最后，使用能带结构的计算，我们证明了MoO3无序域暴露于氧等离子体后的创建导致直接到间接的带隙跃迁在单层二硫化钼，这解释了所观察到的PL淬灭。
By creating defects via oxygen plasma treatment, we demonstrate optical properties variation of single-layer MoS2. We found that, with increasing plasma exposure time, the photoluminescence (PL) evolves from very high intensity to complete quenching, accompanied by gradual reduction and broadening of MoS2 Raman modes, indicative of distortion of the MoS2 lattice after oxygen bombardment. X-ray photoelectron spectroscopy study shows the appearance of the Mo6+ peak, suggesting the creation of MoO3 disordered regions in the MoS2 flake. Finally, using band structure calculations, we demonstrate that the creation of MoO3 disordered domains upon exposure to oxygen plasma leads to a direct-to-indirect bandgap transition in single-layer MoS2, which explains the observed PL quenching.