White-Light Electroluminescence From n-ZnO/p-GaN Heterojunction Light-Emitting Diodes at Reverse Breakdown Bias
White-Light Electroluminescence From n-ZnO/p-GaN Heterojunction Light-Emitting Diodes at Reverse Breakdown Bias
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DOI：
10.1109/ted.2011.2164408
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发表时间：
2011-09
影响因子：
3.1
通讯作者：
H. C. Chen;M. J. Chen;Y. H. Huang;W. Sun;W. C. Li;J. Yang;H. Kuan;M. Shiojiri
中科院分区：
文献类型：
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作者：
H. C. Chen;M. J. Chen;Y. H. Huang;W. Sun;W. C. Li;J. Yang;H. Kuan;M. Shiojiri
报道了n型ZnO（n-ZnO）/p型GaN（p-GaN）异质结发光二极管在反向击穿偏压下的白光电致发光。采用原子层沉积法在p-GaN上生长了n-ZnO外延层。ZnO/GaN界面附近的深能级电子隧穿到n-ZnO的导带是导致反向击穿的主要原因。EL光谱由450 nm的蓝光和550 nm附近的宽带组成，分别来自p-GaN中Mg的受主能级和ZnO/GaN界面附近的深能级。EL光谱的色坐标为（0.31，0.36），这非常接近于标准白色光的（0.33，0.33）。
White-light electroluminescence (EL) from n-type ZnO (n-ZnO)/p-type GaN (p-GaN) heterojunction light-emitting diodes operated at reverse breakdown bias was reported. The n-ZnO epilayers were grown by atomic layer deposition on p-GaN. The electron tunneling from the deep-level states near the ZnO/GaN interface to the conduction band in n-ZnO is responsible for the reverse breakdown. The EL spectrum was composed of the blue light at 450 nm and the broadband around 550 nm, which originated from the Mg acceptor levels in p-GaN and the deep-level states near the ZnO/GaN interface, respectively. The chromaticity coordinate of the EL spectrum was (0.31, 0.36), which is very close to (0.33, 0.33) of the standard white light.