High-Efficiency Neutral-Beam Generation by Combination of Inductively Coupled Plasma and Parallel Plate DC Bias
High-Efficiency Neutral-Beam Generation by Combination of Inductively Coupled Plasma and Parallel Plate DC Bias
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结合电感耦合等离子体和平行板直流偏置产生高效中性束
DOI：
10.1143/jjap.40.l779
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发表时间：
2001
影响因子：
1.5
通讯作者：
K. Ichiki
中科院分区：
文献类型：
--
作者：
S. Samukawa;K. Sakamoto;K. Ichiki
为了避免在蚀刻过程中由电荷积累和紫外线和x射线光子引起的几种辐射损伤，我们开发了一种高性能的中性光束蚀刻系统。中性束源由电感耦合等离子体（ICP）源和上下碳平行板组成。底部的碳板包括许多用于从等离子体中提取中性光束的孔。通过向顶板提供直流偏置，产生的离子加速向底板移动。它们中的大多数有效地转化为中性原子，或者在离子传输过程中与气体分子的电荷转移碰撞中和，或者与底板的孔侧壁中和，或者与底板末端附近的低能电子重组。孔径和孔径长度分别为1 mm和10 mm时，中和效率几乎为100%，中和通量密度相当于1.2 ~ 2.8 mA/cm2。因此，可以有效地从ICP源和底板的孔中产生中性光束。
To avoid several kinds of radiation damage caused by charge build-up and by ultraviolet and X-ray photons during etching processes, we have developed a high-performance, neutral-beam etching system. The neutral-beam source consists of an inductively coupled plasma (ICP) source and top and bottom carbon parallel plates. The bottom carbon plate includes numerous apertures for extracting neutral beams from the plasma. By supplying a direct current (DC) bias to the top plate, the generated ions are accelerated towards the bottom plate. Most of them are efficiently converted into neutral atoms, either by neutralization in charge-transfer collisions with gas molecules during the ion transport and with aperture sidewalls in the bottom plate, or by recombination with low-energy electrons near the end of the bottom plate. When the aperture diameter and aperture length were 1 mm and 10 mm, respectively, the neutralization efficiency was almost 100% and the neutral flux density was equivalent to 1.2–2.8 mA/cm2. A neutral beam could thus be produced efficiently from the ICP source and the apertures in the bottom plate.