BEHAVIOR AND MECHANISM OF STEP BUNCHING DURING METALORGANIC VAPOR PHASE EPITAXY OF GAAS
BEHAVIOR AND MECHANISM OF STEP BUNCHING DURING METALORGANIC VAPOR PHASE EPITAXY OF GAAS
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DOI：
10.1063/1.113282
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发表时间：
1995-04
影响因子：
4
通讯作者：
M. Shinohara;N. Inoue
中科院分区：
文献类型：
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作者：
M. Shinohara;N. Inoue
通过改变生长温度和衬底取向差角，研究了金属有机物气相外延GaAs生长过程中台阶聚束的行为。研究发现，当取向差角（即衬底表面台阶密度）增大到一定值时，单层台阶流生长转变为台阶聚束生长，表明存在临界台阶密度。该临界值随生长温度的升高而降低。聚束台阶宽度与取向差角无关，但随生长温度的升高而增大。我们提出，当Ga原子在台阶边缘的浓度小于平衡浓度时，发生从台阶流生长到台阶聚束的转变。各种聚束特性解释使用这个模型。
The behavior of step bunching during GaAs growth for metalorganic vapor phase epitaxy is investigated by varying growth temperatures and substrate misorientation angles. It is found that monolayer step‐flow growth changes to step‐bunching growth when the misorientation angle, that is, the substrate surface step density, increases to a certain value, showing the existence of a critical step density. This critical value decreases with increasing growth temperature. The bunched terrace width does not depend on the misorientation angle, but it increases with growth temperature. We propose that the transition to step bunching from step‐flow growth occurs when the concentration of Ga adatoms at the step edges is less than the equilibrium concentration. Various bunching characteristics are explained using this model.