SiO2 Tapered Etching Employing Magnetron Discharge of Fluorocarbon Gas
SiO2 Tapered Etching Employing Magnetron Discharge of Fluorocarbon Gas
复制标题
氟碳气体磁控管放电SiO2锥形蚀刻
DOI：
10.1143/jjap.31.405
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发表时间：
1992
期刊：
影响因子：
--
通讯作者：
Haruo Okano Haruo Okano
中科院分区：
文献类型：
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作者：
T. Ohiwa;K. Horioka;T. Arikado;Isahiro Hasegawa;Haruo Okano Haruo Okano
对SiO2的锥形蚀刻进行了研究，重点研究了衬底温度。通过降低衬底温度，可以获得较高的蚀刻速率。沉积在侧壁上的聚合物膜与光抗蚀剂一起通过O2等离子灰化很容易去除，从而在通孔中产生非常光滑的侧壁，没有任何残留的膜。聚合物沉积实验表明，在-70℃低温下聚合得到的富氟聚合物膜在等离子体环境中耐久性较差，而SiO2的蚀刻剂通过离子轰击在聚合物与下层SiO2的界面处释放，增强了SiO2的蚀刻。
SiO2 tapered etching has been studied with special emphasis on the substrate temperature. A tapered etching profile was formed accompanying a polymer deposition on the side wall, and a high etching rate was obtained by lowering the substrate temperature. The polymer film deposited on the side wall was easily removed together with photoresist by O2 plasma ashing to yield a very smooth side wall in the via hole without any residual films. Experiments on polymer deposition revealed that the polymerization at as low a temperature as -70°C gives a fluorine-rich polymer film with poor durability in a plasma environment, and the etchants for SiO2 are released by ion bombardments at the interface between the polymer and the underlying SiO2 to enhance SiO2 etching.