Direct Detection of 100–5000 eV Electrons With Delta-Doped Silicon CMOS and Electron-Multiplying CCD Imagers
Direct Detection of 100–5000 eV Electrons With Delta-Doped Silicon CMOS and Electron-Multiplying CCD Imagers
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使用 Delta 掺杂硅 CMOS 和电子倍增 CCD 成像仪直接检测 100–5000 eV 电子
DOI：
10.1109/ted.2012.2194715
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发表时间：
2012
影响因子：
3.1
通讯作者：
S. Nikzad
中科院分区：
文献类型：
--
作者：
B. Jacquot;M. Hoenk;T. Jones;T. Cunningham;S. Nikzad
我们已经证明了一个直接检测100-5000 eV的电子与背照式硼δ掺杂的混合硅互补金属氧化物半导体成像器工作在完全耗尽和硅电子倍增电荷耦合器件（CCD）工作在部分耗尽。相对于传统的固态探测器，δ掺杂分子束外延增加了对低能电子的灵敏度，并提高了低能电子探测阈值。我们比较了在这两个三角洲掺杂器件中测得的增益与从控制三角洲掺杂CCD测得的增益。
We have demonstrated a direct detection of 100-5000 eV electrons with a back-illuminated boron delta-doped hybrid silicon complementary metal-oxide-semiconductor imager operating in full depletion and a silicon electron-multiplying charge-coupled device (CCD) operating in partial depletion. The delta-doping molecular beam epitaxy increases sensitivity to low-energy electrons and improves low-energy electron detection threshold relative to conventional solid-state detectors. We compare the gain measured in these two delta-doped devices with gain measured from control delta-doped CCDs.