Metalorganic molecular beam epitaxy of γ‐Al2O3 films on Si at low growth temperatures
Metalorganic molecular beam epitaxy of γ‐Al2O3 films on Si at low growth temperatures
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低生长温度下 Si 上 γ-Al2O3 薄膜金属有机分子束外延
DOI：
10.1063/1.99709
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发表时间：
1988
影响因子：
4
通讯作者：
N. Ohtake
中科院分区：
文献类型：
--
作者：
K. Sawada;M. Ishida;Tetsuro Nakamura;N. Ohtake
采用金属有机分子束外延技术，以Al（CH 3）3和N2 O为原料，在720 ~ 800 °C的低温下，在（100）和（111）Si衬底上成功地异质外延生长了γ-Al 2 O3薄膜。利用原位反射高能电子衍射（TEM）研究了γ-Al_2O_3薄膜与Si衬底的取向关系，结果表明：γ-Al_2O_3薄膜与Si衬底的取向关系为（100）γ-Al_2O_3//（100）Si +[110] γ-Al_2O_3//[110] Si，γ-Al_2O_3薄膜与Si衬底的取向关系为（111）γ-Al_2O_3//（111）Si +[112] γ-Al_2O_3//[112] Si。生长的薄膜的化学计量被发现类似于从俄歇信号的Al 2 O3。
Heteroepitaxial growth of γ‐Al2O3 films was performed successfully onto (100) and (111) Si substrates at low substrate temperatures between 720 and 800 °C by metalorganic molecular beam epitaxy using N2 bubbled Al(CH3)3 and N2O. Using in situ reflection high‐energy electron diffraction, the orientation relationships between epitaxial γ‐Al2O3 films and Si substrates were found to be (100) γ‐Al2O3//(100) Si with [110] γ‐Al2O3//[110] Si and (111) γ‐Al2O3//(111) Si with [112] γ‐Al2O3//[112] Si. The stoichiometry of the grown films was found similar to that of Al2O3 from Auger signals.