Room temperature epitaxial growth of AlGaN on ZnO by pulsed laser deposition
Room temperature epitaxial growth of AlGaN on ZnO by pulsed laser deposition
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DOI：
10.1063/1.2354413
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发表时间：
2006-09
影响因子：
4
通讯作者：
A. Kobayashi;J. Ohta;Y. Kawaguchi;H. Fujioka
中科院分区：
文献类型：
--
作者：
A. Kobayashi;J. Ohta;Y. Kawaguchi;H. Fujioka
采用脉冲激光沉积法在原子级平坦的ZnO衬底上生长了Al_（0.1）Ga_（0.9）N薄膜。AlGaN在室温下的外延生长的逐层模式进行，和膜显示原子级平坦的阶梯和梯田表面。另一方面，在600°C下的生长以三维方式进行，并且膜遭受其结晶质量的劣化和粗糙的表面形态。这些结果表明，通过降低生长温度来抑制AlGaN和ZnO之间的界面层的形成是本质上重要的，以便利用接近晶格匹配的ZnO衬底。他们还发现，高质量的AlGaN薄膜可以在高氮丰富的条件下，在降低的生长温度，这提供了一个鲜明的对比的情况下，分子束外延。
The authors have grown Al0.1Ga0.9N films on atomically flat ZnO substrates at room temperature (RT) by pulsed laser deposition. Epitaxial growth of AlGaN at RT proceeds in the layer-by-layer mode, and the films show atomically flat stepped and terraced surfaces. On the other hand, growth at 600°C proceeds three dimensionally, and the films suffer from degradation in their crystalline quality and from rough surface morphology. These results indicate that suppression of the formation of interfacial layers between AlGaN and ZnO by reducing the growth temperature is inherently important in order to take advantage of the nearly lattice-matched ZnO substrates. They have also found that high-quality AlGaN films can be obtained under highly N-rich conditions at reduced growth temperatures, which provides a striking contrast to the case of molecular beam epitaxy.