Experimental Demonstration of High-Voltage 4H-SiC Bi-Directional IGBTs
Experimental Demonstration of High-Voltage 4H-SiC Bi-Directional IGBTs
复制标题
高压4H-SiC双向IGBT的实验演示
DOI：
10.1109/led.2016.2581419
复制
发表时间：
2016
影响因子：
4.9
通讯作者：
T. Chow
中科院分区：
文献类型：
--
作者：
S. Chowdhury;C. Hitchcock;Z. Stum;R. Dahal;I. Bhat;T. Chow
我们首次在250 μm厚的轻掺杂独立衬底上制作了双向4 H-SiC平面栅绝缘栅双极晶体管。在Si面上，在室温下获得9.7V的正向电压降（在50 A/cm 2下），具有140 mQ ·cm 2的微分导通电阻，表明良好的电导率调制。我们还证明了通过施加背栅偏置来控制BD-IGBT的静态特性中的少数载流子注入。
We experimentally demonstrate, for the first time, bi-directional 4H-SiC planar gate, insulated gate bipolar transistors fabricated on 250-μm thick, lightly doped free-standing substrates. On Si face, forward voltage drop (at 50 A/cm2) of 9.7 V was obtained at room temperature, with a differential ON-resistance of 140 mQ · cm2, indicating good conductivity modulation. We have also demonstrated control over minority carrier injection in static characteristics of the BD-IGBTs by application of a back-gate bias.