Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition
Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition
复制标题
DOI：
10.1063/1.1410322
复制
发表时间：
2001-11-15
影响因子：
3.2
通讯作者：
Milne, WI
中科院分区：
文献类型：
--
作者：
Chhowalla, M;Teo, KBK;Milne, WI
报道了利用直流等离子体增强化学气相沉积系统生长垂直排列的碳纳米管的方法。研究了Ni催化剂层厚度、偏置电压、沉积温度、C2 H2：NH3比和压力对生长特性的影响。结果发现，纳米管的直径，生长速率和面密度由催化剂层的初始厚度控制。纳米管的排列取决于电场。我们的研究结果表明，生长发生通过扩散的碳通过Ni催化剂颗粒，它骑在生长管的顶部。(C)2001年美国物理学会。
The growth of vertically aligned carbon nanotubes using a direct current plasma enhanced chemical vapor deposition system is reported. The growth properties are studied as a function of the Ni catalyst layer thickness, bias voltage, deposition temperature, C2H2:NH3 ratio, and pressure. It was found that the diameter, growth rate, and areal density of the nanotubes are controlled by the initial thickness of the catalyst layer. The alignment of the nanotubes depends on the electric field. Our results indicate that the growth occurs by diffusion of carbon through the Ni catalyst particle, which rides on the top of the growing tube. (C) 2001 American Institute of Physics.