Growth of ZnSnN2 by Molecular Beam Epitaxy
Growth of ZnSnN2 by Molecular Beam Epitaxy
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DOI：
10.1007/s11664-013-2962-8
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发表时间：
2014-04-01
影响因子：
2.1
通讯作者：
Durbin, S. M.
中科院分区：
文献类型：
--
作者：
Feldberg, N.;Aldous, J. D.;Durbin, S. M.
Zn-IV-N-2 系列材料代表了一种潜在的地球丰富元素替代品，可替代基于镓和铟的传统化合物半导体材料。虽然 ZnSiN2 和 ZnGeN2 都已得到一定程度的研究，但对窄带隙成员 ZnSnN2 知之甚少。在这里，我们通过等离子体辅助分子束外延研究了晶体 ZnSnN2 的生长动力学。尽管在低 Zn:Sn 通量比下生长的薄膜中观察到显着的锡覆盖，但无论生长条件如何，所有薄膜都表现出一定程度的结晶顺序；在为提高结晶度而提高的基板温度下，Zn 通量尤其变得越来越成问题。单晶材料是通过仔细优化生长参数来实现的。然而，无论沉积条件或基材选择如何，所有薄膜都表现出单斜晶结构，而不是预测的斜方晶格；这可以直接归因于亚晶格无序。
The Zn-IV-N-2 family of materials represents a potential earth abundant element alternative to conventional compound semiconductor materials that are based on gallium and indium. While both ZnSiN2 and ZnGeN2 have been studied to some degree, very little is known about the narrow-gap member ZnSnN2. Here, we investigate the growth dynamics of crystalline ZnSnN2 through plasma-assisted molecular beam epitaxy. All films exhibit some degree of crystalline order regardless of growth conditions, although significant tin coverage was observed for films grown with low Zn:Sn flux ratio; Zn flux in particular became increasingly problematic at increased substrate temperatures designed to improve crystallinity. Single-crystal material was achieved through careful optimization of growth parameters. Regardless of deposition conditions or substrate choice, however, all films exhibit a monoclinic structure as opposed to the predicted orthorhombic lattice; this can be directly attributed to sublattice disorder.