Ternary perovskite thin films for energy harvesting MEMS
Ternary perovskite thin films for energy harvesting MEMS
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用于能量收集MEMS的三元钙钛矿薄膜
DOI：
10.1109/isaf.2010.5712269
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
H. Kotera
中科院分区：
文献类型：
--
作者：
K. Wasa;I. Kanno;H. Kotera
铁电PZT薄膜具有极高的压电系数，适合于制作压电能量收集（EH）MEMS。然而，目前，具有小压电系数的非铁电AlN薄膜被认为是适合于压电EH MEMS的制造，由于其小的介电常数。PZT薄膜的高介电常数降低了EH MEMS的功率输出。本文研究了PZT基三元化合物Pb（Mn，Nb）O_3-PZT单晶薄膜的压电性能，结果表明：Pb（Mn，Nb）O_3-PZT单晶薄膜具有高的压电系数和小的介电常数。其输出功率将优于AlN薄膜EH MEMS的上级。
The ferroelectric PZT thin films will be suitable for a fabrication of the piezoelectric energy harvesting (EH) MEMS due to their extremely high piezoelectric coefficients. However, at present the non-ferroelectric AlN thin films with a small piezoelectric coefficients are considered to be suitable for a fabrication of the piezoelectric EH MEMS due to their small dielectric constants. The high dielectric constants of the PZT thin films reduce the power output of the EH MEMS. In this paper it is shown the single crystal thin films of PZT-based ternary compounds Pb(Mn,Nb)O3-PZT show high piezoelectric coefficients with small dielectric constants. Their output powers of the EH MEMS will be superior to the AlN thin film EH MEMS.