Built-in Potential and Open Circuit Voltage of Heterojunction CuIn1-xGaxSe2 Solar Cells
Built-in Potential and Open Circuit Voltage of Heterojunction CuIn1-xGaxSe2 Solar Cells
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异质结 CuIn1-xGaxSe2 太阳能电池的内建电位和开路电压
DOI：
10.1557/proc-865-f5.19
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
S. Niki
中科院分区：
文献类型：
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作者：
A. Yamada;K. Matsubara;K. Sakurai;S. Ishizuka;Hitoshi Tampo Hajime;Shibata Tomoyuki Baba;Yasuyuki Kimura;S. Nakamura;H. Nakanishi;S. Niki
讨论了高x CuIn1-xGaxSe2 (CIGS)/ZnO太阳能电池开路电压（Voc）保持较低的原因。本文表明，Voc上限可以简单地解释为一个模型，即CIGS的价带能（Ev）几乎不随x变化而变化。当ZnO的导带能（Ec）低于高x CIGS的导带能（Ec）时（DEc o）会在导带中产生光电子势势，部分抵消Voc，因此低x CIGS电池的Voc受CIGS的Ec控制。基于这一概念，给出了适用于高x CIGS吸收体太阳能电池的窗口和透明电极的材料选择指南。
The reasons why the open circuit voltage (Voc) of high-x CuIn1-xGaxSe2 (CIGS)/ZnO solar cells remain low are discussed. Here it is shown that the Voc ceiling can be interpreted simply on the basis of a model that the valence-band energy (Ev) of CIGS is almost immovable irrespective of x. When the conduction-band energy (Ec) of ZnO is lower than that of high-x CIGS (DEc o gives rise to a photoelectrons barrier in the conduction-band that partially cancels Voc, thus the Voc of a low-x CIGS cell is governed by the Ec of CIGS. Based upon this concept, a material selection guideline is given for the windows and transparent electrodes appropriate for high-x CIGS absorbers-based solar cells.