Suitability of Au- and Self-Assisted GaAs Nanowires for Optoelectronic Applications
Suitability of Au- and Self-Assisted GaAs Nanowires for Optoelectronic Applications
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DOI：
10.1021/nl104316t
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发表时间：
2011-03-01
期刊：
影响因子：
10.8
通讯作者：
Riechert, Henning
中科院分区：
文献类型：
--
作者：
Breuer, Steffen;Pfueller, Carsten;Riechert, Henning
在气-液-固纳米线生长期间引入Au可能固有地限制基于纳米线的器件的性能。在这里，我们评估的材料质量的金辅助和无金生长的GaAs/（Al，Ga）As核壳纳米线使用光致发光光谱。我们表明，在室温下，内量子效率是系统的Au辅助纳米线比Au自由的低得多。相比之下，后者的光电材料质量与最先进的平面双异质结构的光电材料质量相当。
The incorporation of Au during vapor-liquid-solid nanowire growth might inherently limit the performance of nanowire-based devices. Here, we assess the material quality of Au-assisted and Au-free grown GaAs/(Al,Ga)As core-shell nanowires using photoluminescence spectroscopy. We show that at room temperature, the internal quantum efficiency is systematically much lower for the Au-assisted nanowires than for the Au-free ones. In contrast, the optoelectronic material quality of the latter is comparable to that of state-of-the-art planar double heterostructures.