High-brightness and thermal stable Sr3La(PO4)3: Eu3+ red phosphor for NUV light-emitting diodes

High-brightness and thermal stable Sr3La(PO4)3: Eu3+ red phosphor for NUV light-emitting diodes
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DOI:
10.1016/j.jallcom.2014.01.018
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发表时间:
2014-04
影响因子:
6.2
通讯作者:
Xinguo Zhang;Chunyan Zhou;Jiahui Song;Liya Zhou;M. Gong
Xinguo Zhang;Chunyan Zhou;Jiahui Song;Liya Zhou;M. Gong
中科院分区:
材料科学2区
文献类型:
--
作者:
Xinguo Zhang;Chunyan Zhou;Jiahui Song;Liya Zhou;M. Gong

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首次采用固相反应法制备了高亮度红色荧光粉:Sr3La(PO4)3:Eu3+。对其光致发光性能进行了研究,确定了Eu3+在Sr3La(PO4)3中的最佳掺杂浓度为80%。这种荧光粉的高猝灭浓度是由于Eu3+离子之间较弱的能量传递效应所致。Sr3La(PO4)3:Eu3+具有良好的热稳定性,其发光强度在150℃以上略有下降。由Sr3La(PO4)3:0.80Eu3和395 nm InGaN芯片制成的光致发光二极管显示出明亮的红色发射,这表明该荧光粉是一种很有前途的红色NUV LED候选材料。
High-brightness red phosphor, Sr3La(PO4)3: Eu3+was prepared by the solid-state reaction for the first time. Its photo-luminescent property was investigated and the optimum concentration of Eu3+doped in the Sr3La(PO4)3is 80 mol%. High quenching concentration in this phosphor is due to weak energy transfer effect between Eu3+ions. Sr3La(PO4)3: Eu3+exhibited good thermal stability and its emission intensity decreased slightly at temperature above 150 °C. The fabricated phototype LEDs with Sr3La(PO4)3: 0.80Eu3and 395 nm-emitting InGaN chips exhibit bright red emission, indicating that this phosphor is a promising candidate as a red component for NUV LEDs application.