Oxygen vacancies in high-k oxides
Oxygen vacancies in high-k oxides
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DOI：
10.1016/j.mee.2007.04.020
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发表时间：
2007-09-01
影响因子：
2.3
通讯作者：
Robertson, J.
中科院分区：
文献类型：
--
作者：
Tse, K.;Liu, D.;Robertson, J.
高介电常数（K）栅极氧化物（例如HfO2）遭受电荷俘获、阈值电压偏移以及金属或多晶硅栅极难以实现带边功函数值。我们调查这些是如何相关的一系列从头计算中的氧空位。发现O空位与光学、发光和电荷泵谱相关。O空位对费米能级钉扎效应有贡献，从而限制了带边功函数。抑制空位的运动可以允许栅极电极功函数的较少钉扎。
High dielectric constant (K) gate oxides such as HfO2 have suffered from charge trapping, threshold voltage shifts and a difficulty of metal or poly-Si gates to achieve band edge work function values. We investigate how these are related to the oxygen vacancies in a series of ab-initio calculations. The O vacancy is found to correlate with optical, luminescence and charge pumping spectra. The O vacancy contributes to the Fermi level pinning effect, which limits the band edge work functions. Inhibiting motion of vacancies may allow less pinning of gate electrode work functions.