N-Type Doping of Fullerenes for Planar Perovskite Solar Cells
N-Type Doping of Fullerenes for Planar Perovskite Solar Cells
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DOI：
10.1021/acsenergylett.8b00217
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发表时间：
2018-03
影响因子：
22
通讯作者：
Qing-Qing Ye-Qing;Zhaokui Wang;M. Li;Congcong Zhang;Ke-Hao Hu;L. Liao
中科院分区：
文献类型：
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作者：
Qing-Qing Ye-Qing;Zhaokui Wang;M. Li;Congcong Zhang;Ke-Hao Hu;L. Liao
富勒烯修饰二氧化钛是进一步提高钙钛矿型太阳能电池器件效率和电池稳定性的有效策略。然而，富勒烯材料固有的低电子迁移率和电导率的问题可能会限制其在PSCs中的潜在应用。在这里，我们展示了一种n掺杂的电子传输层，通过在bis(1-[3-(methoxycarbonyl)propyl]-1-phenyl)-[6，6]C62中掺杂十甲基钴来制备n-i-p结构的PSC。通过溶液掺杂工艺，我们成功地实现了双光子晶体的n型掺杂。DMC掺杂在调节双基PCBM的能级、改善电子迁移率、提高薄膜电导率等方面起到了一系列的作用。BiS-PCBM：DMC复合薄膜表面光滑，可作为后续钙钛矿层沉积和生长的衬底。此外，BIS-PCBM：DMC复合膜还表现出良好的耐溶剂性。
Modification of TiO2 by using fullerenes is an efficient strategy to further improve the device efficiency and enhance the cell stability of perovskite solar cells (PSCs). However, the intrinsic issues of low electron mobility and electrical conductivity of fullerene materials may restrict their potential application in PSCs. Here, we demonstrated an n-doped electron-transporting layer by doping bis(1-[3-(methoxycarbonyl)propyl]-1-phenyl)-[6,6]C62 (bis-PCBM) with decamethylcobaltocene (DMC) to fabricate n–i–p structure PSCs. We successfully realized an n-type doping of bis-PCBM via a solution-processed doping process. DMC doping played a series of roles in adjusting the energy levels, improving the electron mobility and enhancing the film conductivity of bis-PCBM. A bis-PCBM:DMC composite film could act as an underlay for the deposition and growth of a subsequent perovskite layer owing to its smooth morphology. In addition, the bis-PCBM:DMC composite film also presented good solvent resistance, which coul...