Hybrid Mode Locking in Semiconductor Lasers: Simulations, Analysis, and Experiments
Hybrid Mode Locking in Semiconductor Lasers: Simulations, Analysis, and Experiments
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DOI：
10.1109/jstqe.2012.2228633
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发表时间：
2013-07-01
影响因子：
4.9
通讯作者：
Bimberg, Dieter
中科院分区：
文献类型：
--
作者：
Arkhipov, Rostislav;Pimenov, Alexander;Bimberg, Dieter
利用一组三个延迟的微分方程组，对两段边沿发射半导体激光器的混合锁模进行了数值和解析研究。在这些方程中，施加到可饱和吸收部分的外部射频信号通过该部分中载流子弛豫率的调制来建模。对脉冲重复频率与外调制频率同步的锁定范围进行了数值估计，并研究了调制形状和幅度对该范围的影响。在小信号调制极限下，对锁定范围宽度与激光器参数的关系进行了渐近分析。数值模拟表明，当外调制频率约为自由运转被动锁模激光器f(P)脉冲重复频率的两倍半时，也可以实现混合锁模。最后，我们给出了一个20 GHz量子点激光器的混合锁模的实验演示，该激光器的反向偏置调制频率接近f(P)/2。
Hybrid mode locking in a two-section edge-emitting semiconductor laser is studied numerically and analytically using a set of three delay differential equations. In these equations, the external RF signal applied to the saturable-absorber section is modeled by the modulation of the carrier relaxation rate in this section. The estimation of the locking range where the pulse repetition frequency is synchronized with the frequency of the external modulation is performed numerically and the effect of the modulation shape and amplitude on this range is investigated. Asymptotic analysis of the dependence of the locking range width on the laser parameters is carried out in the limit of small-signal modulation. Our numerical simulations indicate that hybrid mode locking can be also achieved in the cases when the frequency of the external modulation is approximately twice and half of the pulse repetition frequency of the free-running passively mode-locked laser f(P). Finally, we provide an experimental demonstration of hybrid mode locking in a 20-GHz quantum-dot laser with the modulation frequency of the reverse bias applied to the absorber section close to f(P)/2.