Device-Level Experimental Observations of NBTI-Induced Random Timing Jitter
Device-Level Experimental Observations of NBTI-Induced Random Timing Jitter
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DOI：
10.1109/tdmr.2014.2354339
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发表时间：
2014-09
影响因子：
2
通讯作者：
G. Jiao;J. W. Lu;J. Campbell;J. Ryan;K. Cheung;C. Young;G. Bersuker
中科院分区：
文献类型：
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作者：
G. Jiao;J. W. Lu;J. Campbell;J. Ryan;K. Cheung;C. Young;G. Bersuker
本文利用器件级眼图测量来研究电路速度下负偏置温度不稳定性（NBTI）引起的时序抖动变化。测量的抖动检查各种环形振荡器和伪随机门模式。选择环形振荡器模式来模拟典型的NBTI可靠性表征，而伪随机模式作为真实世界随机逻辑的近似。我们的观察结果表明，NBTI引起的抖动是门模式依赖和最严重的伪随机的情况下。总的来说，本文强烈建议，典型的NBTI环形振荡器的表征方法是不敏感的随机逻辑时序抖动。
This paper utilizes device-level eye-diagram measurements to examine negative bias temperature instability (NBTI)-induced changes in timing jitter at circuit speeds. The measured jitter is examined for a variety of ring oscillator and pseudorandom gate patterns. The ring oscillator patterns were chosen to mimic typical NBTI reliability characterizations, whereas the pseudorandom patterns act as an approximation for real-world random logic. Our observations indicate that NBTI-induced jitter is gate pattern dependent and most severe for the pseudorandom case. Collectively, this paper strongly suggests that typical NBTI ring oscillator characterization methods are insensitive to random logic timing jitter.