Magnetic Tunnel Junction Enabled Stochastic Spiking Neural Networks: From Non-Telegraphic to Telegraphic Switching Regime

Magnetic Tunnel Junction Enabled Stochastic Spiking Neural Networks: From Non-Telegraphic to Telegraphic Switching Regime
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DOI:
10.1103/physrevapplied.8.064017
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发表时间:
2017-09
期刊:
ArXiv
影响因子:
--
通讯作者:
C. Liyanagedera;Abhronil Sengupta;Akhilesh R. Jaiswal;K. Roy
C. Liyanagedera;Abhronil Sengupta;Akhilesh R. Jaiswal;K. Roy
中科院分区:
其他
文献类型:
--
作者:
C. Liyanagedera;Abhronil Sengupta;Akhilesh R. Jaiswal;K. Roy

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Stochastic Spiking Neural Networks based on nanoelectronic spin devices can be a possible pathway at achieving"brain-like"compact and energy-efficient cognitive intelligence. The computational model attempt to exploit the intrinsic device stochasticity of nanoelectronic synaptic or neural components to perform learning or inference. However, there has been limited analysis on the scaling effect of stochastic spin devices and its impact on the operation of such stochastic networks at the system level. This work attempts to explore the design space and analyze the performance of nano-magnet based stochastic neuromorphic computing architectures for magnets with different barrier heights. We illustrate how the underlying network architecture must be modified to account for the random telegraphic switching behavior displayed by magnets with low barrier heights as they are scaled into the superparamagnetic regime. We perform a device to system level analysis on a deep neural network architecture for a digit recognition problem on the MNIST dataset.