An extending broadband near-infrared absorption of Si-based deep-trench microstructures
An extending broadband near-infrared absorption of Si-based deep-trench microstructures
复制标题
硅基深沟槽微结构的扩展宽带近红外吸收
DOI：
10.1016/j.optcom.2017.01.041
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发表时间：
2017
影响因子：
2.4
通讯作者：
Zhang Zhuo
中科院分区：
文献类型：
--
作者：
Yang Haigui;Liu Xiaoyi;Gao Jinsong;Wang Xiaoyi;Liu Hai;Zhang Zhuo
设计并数值研究了一种覆盖有连续薄金（Au）膜的硅基深沟槽微结构。它突破了Si材料的吸收限制，将近红外（NIR）吸收范围大大扩展到1500 nm。通过模拟的电场强度分布，我们清晰地观察到了表面等离子体激元的激发和深沟槽内形成的等离子体腔的驻波共振，很好地解释了宽带近红外吸收的扩展。我们进一步详细讨论了沟槽深度对腔模和近红外吸收的影响。通过结合所提出的微结构，这是一种很有前途的方法，以实现扩展的宽带和高近红外光响应的硅基探测器。
We design and investigate numerically a Si-based deep-trench microstructure covered with continuous thin gold (Au) films. It breaks through the absorption limitation of Si material and greatly extends the near-infrared (NIR) absorption range to 1500 nm. By the simulated distributions of electric-field intensity, we observe clearly the excitation of surface plasmon polaritons and the standing wave resonance of plasmon cavity formed inside the deep trench, by which we explain the extending broadband NIR absorption well. We further discuss the influence of trench depth on the cavity mode and NIR absorption in detail. By combination of the proposed microstructures, it is a promising approach to realize an extending broadband and high NIR photoresponse in Si-based detectors.