A dielectric surface coating technique to enhance boiling heat transfer from high power microelectronics
A dielectric surface coating technique to enhance boiling heat transfer from high power microelectronics
复制标题
DOI：
10.1109/95.465166
复制
发表时间：
1995-09
期刊：
影响因子：
--
通讯作者：
J. P. O'connor;S. M. You;D. C. Price
中科院分区：
文献类型：
--
作者：
J. P. O'connor;S. M. You;D. C. Price
产生表面微结构的两种良性方法，“喷涂”和“喷涂”，提供池沸腾传热增强。所述方法不需要目标表面暴露于高应力环境，使得它们适用于电子部件表面。涂漆表面微结构应用于矩形、水平方向的表面，并提供高达85%的初始腐蚀减少。核态沸腾过热度降低70 - 80%，最大热通量（临界热通量-CHF）增加100%，超过未处理的参考表面。表面微结构也被施加到硅测试芯片，并在饱和和过冷（45/spl deg/C）条件下使用FC-72进行测试。在过冷条件下，在85/spl deg/C的结温下提供100 W/cm/sup 2/的散热速率，观察到的最高CHF为159 W/cm/sup 2/，比饱和条件下未处理的芯片表面的CHF高224%。>
Two benign methods of generating surface microstructures, "spraying" and "painting", provide pool boiling heat transfer enhancement. The methods do not require the target surface to be exposed to high stress environments, making them applicable to electronic component surfaces. The painted surface microstructures are applied to a rectangular, horizontally oriented surface, and provide up to a 85% reduction in incipient superheat. Between a 70 and 80% reduction in nucleate boiling superheats, and as much as a 100% increase in the maximum heat flux (critical heat flux-CHF), beyond that of the nontreated reference surface. The surface microstructures are also applied to a silicon test chip and tested at saturated and sub-cooled (45/spl deg/C) conditions using FC-72. At sub-cooled conditions, heat dissipation rates of 100 W/cm/sup 2/ were provided at junction temperatures of 85/spl deg/C, and the highest CHF observed was 159 W/cm/sup 2/, 224% higher than that from the untreated chip surface at saturated conditions. >