Present understanding of Eu luminescent centers in Eu-doped GaN grown by organometallic vapor phase epitaxy
Present understanding of Eu luminescent centers in Eu-doped GaN grown by organometallic vapor phase epitaxy
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DOI：
10.7567/jjap.53.05fa13
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发表时间：
2014-05-01
影响因子：
1.5
通讯作者：
Dierolf, Volkmar
中科院分区：
文献类型：
--
作者：
Fujiwara, Yasufumi;Dierolf, Volkmar
我们已经成功地生长了Eu掺杂的GaN（GaN：Eu）层与高结晶质量的有机金属气相外延，并已证明了一个低电压电流注入的红色发光二极管（LED）使用的GaN：Eu层的应用电压低至3V。通过优化生长条件和器件结构，在20 mA的注入电流下，光输出功率稳定地增加到亚mW。为了进一步提高GaN：Eu的输出功率，对GaN：Eu中的Eu发光中心进行了光谱研究。各种Eu发光位点和强烈的位置依赖的能量转移过程被清楚地揭示。Mg与Eu共掺杂显著提高了能量传递效率。一个建议的模型中心与高能量转移效率的讨论有关的本地结构。(C)2014日本应用物理学会
We have succeeded in growing Eu-doped GaN (GaN:Eu) layers with high crystalline quality by organometallic vapor phase epitaxy, and have demonstrated a low-voltage current-injected red emission from a light-emitting diode (LED) using the GaN: Eu layer with an applied voltage of as low as 3V. By optimizing growth conditions and device structures, the light output power has increased steadily to up to sub-mW at an injected current of 20 mA. For further improvement of the output power, Eu luminescent centers have been spectroscopically investigated in GaN: Eu. A variety of Eu luminescent sites and a strongly site-dependent energy transfer process were clearly revealed. The energy-transfer efficiency was markedly enhanced by codoping of Mg with Eu. A proposed model for centers with high energy-transfer efficiencies is discussed in relation to the local structure. (C) 2014 The Japan Society of Applied Physics