Low-dose n-type nitrogen implants in 4H-SiC
Low-dose n-type nitrogen implants in 4H-SiC
复制标题
4H-SiC 中的低剂量 n 型氮注入
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
A. Suvorov
中科院分区：
文献类型：
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作者：
N. Saks;S. Ryu;A. Suvorov
采用低剂量氮离子注入的方法在4H-碳化硅中制备了轻掺杂n型薄膜，并用霍尔效应进行了表征。在注入层中实现了近体电子迁移率。注入氮离子的活化率、二能级氮施主的能量和密度，以及通过将测量的霍尔自由电子密度拟合为电荷中性模型而得到的补偿是温度的函数。在1300和1600 °C退火温度下，测得氮的活化率分别为55%和71%。在1300和1600 °C的温度下，未退火的注入损伤的补偿分别是注入剂量的32%和17%。
Lightly-doped n-type layers have been fabricated in 4H-SiC by low-dose implantation of nitrogen ions and characterized using the Hall effect. Near-bulk electron mobility is achieved in the implanted layers. Activation rates for the implanted nitrogen ions, energies and densities of the two-level nitrogen donor, and compensation are found from fitting the measured Hall free-electron density to a charge neutrality model as a function of temperature. Measured nitrogen activation rates are 55% and 71% for 1300 and 1600 °C anneal temperatures, respectively. Compensation due to unannealed implant damage is 32% and 17% of the implant dose for 1300 and 1600 °C anneal temperatures, respectively.