Investigation on microstructures of MnSi x thin films by Raman spectroscopy
Investigation on microstructures of MnSi x thin films by Raman spectroscopy
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DOI:
10.1002/jrs.2122
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发表时间:
2009-03
影响因子:
2.5
通讯作者:
Jennifer Wang;W. Su;R. Xu;Yongliang Fan;Jiang-Shan Zhu
中科院分区:
文献类型:
--
作者:
Jennifer Wang;W. Su;R. Xu;Yongliang Fan;Jiang-Shan Zhu
In this paper, Raman spectroscopy is used to study the microstructures of MnSix thin films annealed at different temperatures. Two phases of Mn silicides, MnSi1.73 and MnSi, are identified, and their Raman spectra are reported. Each phase of Mn silicides shows a set of three well-defined peaks at about 300 cm−1 in the spectrum, which could be used as fingerprints in identifying the formation of the Mn silicides. Compared with conventional X-ray diffraction method, Raman spectroscopy is found to be more sensitive to investigate the microstructures of Mn silicides, especially at the initial stage of formation of the Mn silicides. Copyright © 2008 John Wiley & Sons, Ltd.