Performance Modeling for Carbon Nanotube Interconnects
Performance Modeling for Carbon Nanotube Interconnects
复制标题
碳纳米管互连的性能建模
DOI：
10.1007/978-0-387-69285-2_7
复制
发表时间：
2009
影响因子：
2.4
通讯作者：
J. Meindl
中科院分区：
文献类型：
--
作者：
A. Naeemi;J. Meindl
自1991年发现以来，碳纳米管（CNT）因其具有许多独特的机械，电学，热学和化学性质而受到极大的研究兴趣[1]。单壁碳纳米管（SWNT）是一种直径为0.5至几纳米的石墨烯卷，根据其手性可以是金属或半导体。另一方面，多壁碳纳米管（MWNT）是同心的石墨烯管，其可以具有从几纳米到一百纳米的直径。石墨烯中的面内sp2键甚至比金刚石中的sp3键更强[2]，因此碳纳米管具有非常高的机械强度。单壁碳纳米管接近于理想的一维电子系统，具有许多独特的电学和热学性质，其中一些在第1章中讨论过。由于电子只能在一维中移动，因此在纳米管中散射的相空间非常有限;电子只能向后散射。因此，高质量纳米管中的平均自由程在微米范围内（当偏置电压较低并且没有高能声子散射时）[3]。这与三维金属线形成对比，在三维金属线中，电子可以通过各种小角度散射而反向散射，并且平均自由程在几十纳米的范围内。此外，碳纳米管具有用作晶体管和互连的潜力，因为它们可以是金属的或半导体的，这取决于它们的手性。互连被认为是千兆级集成面临的最大挑战之一，因为它们增加了关键路径的延迟，它们消耗的功率，它们相互之间引起的噪声和抖动，以及它们对电迁移的脆弱性。正如本章所展示的那样，如果碳纳米管得到最佳利用，它们可能会解决这些挑战。本章旨在量化碳纳米管的物理极限，并将其与
Since their discovery in 1991, carbon nanotubes (CNT) have received tremendous research interest as they have many unique mechanical, electrical, thermal and chemical properties [1]. A single-walled carbon nanotube (SWNT) is a graphene roll with a diameter of 0.5 to a few nanometers that depending on its chirality can be either metallic or semiconductor. Multi-walled carbon nanotubes (MWNT), on the other hand, are concentric graphene tubes that may have diameters from a few to a hundred nanometers. The in-plane sp2 bonding in graphene is even stronger than the sp3 bonding in diamond [2], and carbon nanotubes, therefore, have very high mechanical strengths.A SWNT is close to an ideal one-dimensional system of electrons that gives rise to many unique electrical and thermal properties, some of which were discussed in Chapter 1. Since electrons can move in one dimension only, the phase space for scattering in nanotubes is very limited; electrons can be scattered only backward. The mean free path in high-quality nanotubes, therefore, is in the micron range (when the bias voltage is low and there is no high energy phonon scattering)[3]. This is in contrast to a three-dimensional metallic wire in which electrons can be backscattered by various small-angle scatterings, and the mean free paths are in the range of a few tens of nanometers. In addition, carbon nanotubes have the potential of being used as both transistors and interconnects since they can be either metallic or semiconducting depending on their chirality. Interconnects are considered as one of the grandest challenges that gigascale integration faces because of the delay they add to the critical paths, the power they dissipate, the noise and jitter they induce on one another, and their vulnerability to electromigration. As will be demonstrated in this chapter, carbon nanotubes can potentially address these challenges if they are optimally utilized. This chapter aims at quantifying the physical limits of carbon nanotubes and comparing them with