Near-junction microfluidic thermal management of RF power amplifiers
Near-junction microfluidic thermal management of RF power amplifiers
复制标题
射频功率放大器的近结微流体热管理
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
A. Sivananthan
中科院分区：
文献类型：
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作者：
A. Bar;J. Maurer;A. Sivananthan
尽管氮化镓(GaN)作为工业和国防应用的宽带隙材料受到了广泛的关注，但热阻抗是充分利用其固有的高电子薄层电荷密度和电击穿电压的重要障碍。在过去的四年里，国防高级研究计划局(DARPA)一直致力于通过使用金刚石衬底以及对流和蒸发微流体来降低近结热阻的研究。描述了与这种嵌入式热管理技术的发展相关的选择、挑战和技术，重点介绍了与GaN功率放大器相关的努力的成就和现状。
While gallium nitride (GaN) is attracting broad attention as the wide bandgap material of choice for both industrial and defense applications, thermal impediments present a significant barrier to full exploitation of its inherently high electron sheet charge density and electrical breakdown voltage. For the last four years, the Defense Advanced Research Projects Agency (DARPA) has pursued research focused on reduction of near-junction thermal resistance through use of diamond substrates and convective and evaporative microfluidics. The options, challenges, and techniques associated with the development of this embedded thermal management technology are described, with emphasis on the accomplishments and status of efforts related to GaN power amplifiers.
影响因子：
4
作者：
Sun, Huarui;Simon, Roland B.;Kuball, Martin
通讯作者：
Kuball, Martin