Photogenerated charge carrier recombination processes in CdS/P3OT solar cells: effect of structural and optoelectronic properties of CdS films
Photogenerated charge carrier recombination processes in CdS/P3OT solar cells: effect of structural and optoelectronic properties of CdS films
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CdS/P3OT 太阳能电池中的光生载流子复合过程：CdS 薄膜结构和光电特性的影响
DOI：
10.1051/epjap/2011110032
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Hailing Hu
中科院分区：
文献类型：
--
作者：
H. Cortina;E. Pineda;J. Campos;M. Nicho;Hailing Hu
在过去的二十年中，有机太阳能电池的研究和开发活动得到了加强，并且报道的小电池样品的能量转换效率迅速提高。然而，电池性能和材料制备条件之间的关系尚未完全了解。在这项工作中，电荷载流子复合过程中的混合聚-3-辛基噻吩（P3 OT）/硫化镉（CdS）光伏电池的化学浴沉积的CdS薄膜的结构和光电性能的函数进行了分析。浴溶液的温度在60 ° C和80 °C之间变化，并且沉积时间为1至3小时。用光电导衰减技术测量了CdS薄膜中载流子的复合时间，用飞行时间法估算了P3 OT薄膜中载流子的复合时间。用瞬态光电压技术测定了CdS/P3 OT界面载流子复合速率。结果表明，在较低的溶液温度（60 °C）下生长的CdS薄膜与80 °C下生长的CdS薄膜相比，在CdS/P3 OT界面处的载流子复合速率更高，相应的太阳能电池的短路电流密度和能量转换效率更大。这种改善可能来自于降低晶粒内以及在较低温度下沉积的CdS薄膜的晶界处的电荷载流子陷阱密度。
Research and development activities in organic solar cells have been intensified in the last two decades, and the reported energy conversion efficiency in small cell samples is rapidly increased. However, the relation between cell performance and material preparation conditions is not fully understood. In this work charge carrier recombination processes in hybrid poly-3-octylthiophene (P3OT)/cadmium sulfide (CdS) photovoltaic cells were analyzed as a function of structural and optoelectronic properties of chemical bath deposited CdS thin films. The temperature of the bath solution varied between 60 and 80 °C, and the deposition time from 1 to 3 h. Charge carrier recombination times in CdS films were measured with photoconductance decay technique, whereas the same time in P3OT films was estimated by Time-of-Flight method. Charge carrier recombination rates at CdS/P3OT interface were determined by transient photovoltage technique. It is found that CdS films grown at lower solution temperature (60 °C) give a higher charge carrier recombination rate at CdS/P3OT interface and larger short-circuit current density and energy conversion efficiency values in the corresponding solar cells, in comparison with the 80 °C deposited ones. This improvement could come from the reduction of charge carrier trap density inside grains as well as at grain boundaries in lower temperature deposited CdS films.
影响因子：
56.9
作者：
Kim, Jin Young;Lee, Kwanghee;Heeger, Alan J.
通讯作者：
Heeger, Alan J.