Realization of a High-Performance GaN UV Detector by Nanoplasmonic Enhancement
Realization of a High-Performance GaN UV Detector by Nanoplasmonic Enhancement
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通过纳米等离子体增强实现高性能 GaN 紫外探测器
DOI：
10.1002/adma.201102585
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发表时间：
2012-02-07
影响因子：
29.4
通讯作者：
Miao, Guoqing
中科院分区：
文献类型：
--
作者：
Li, Dabing;Sun, Xiaojuan;Miao, Guoqing
实现高响应度紫外探测器是加速紫外探测器应用的关键挑战。利用纳米等离子体增强，在GaN表面形成Ag纳米颗粒，与没有Ag纳米颗粒的情况相比，GaN UV探测器的响应度提高了约30倍。
Realization of highly responsivity UV detectors is a critical challenge for accelerating the application of UV detectors. Exploiting nanoplasmonic enhancement, Ag nanoparticles have been formed on the GaN surface and the responsivity of the GaN UV detector has been enhanced about 30 times compared with that without Ag nanoparticles.