Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides
Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides
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DOI：
10.1038/s41699-018-0082-2
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发表时间：
2018-11-05
影响因子：
9.7
通讯作者：
Im, Seongil
中科院分区：
文献类型：
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作者：
Lim, June Yeong;Kim, Minju;Im, Seongil
二维（2D）基于过渡金属二硫属元素（TMDs）的货车范德华（vdW）PN结已用于异质结二极管，其基本上利用跨结界面的面外电流。事实上，相同的vdW PN结结构可用于另一重要的器件应用，结型场效应晶体管（JFET），其中面内电流可以沿着2D-2D异质结界面。此外，基于2D TMD的JFET可以使用p沟道和n沟道用于低电压操作，这可能是其独特的特征。在这里，我们将vdW JFET报告为在半导体p型和n-TMD之间具有异质结的面内电流器件。由于这种vdW JFET在vdW界面处具有低密度陷阱，与基于2D TMD的金属绝缘体半导体场效应晶体管（MISFET）不同，实现了0.0-0.1 V的小滞后和类似于100 mV/dec的最佳亚阈值摆幅。从n沟道或p沟道JFET中观察到容易饱和，这是2D MISFET的另一个优点，表现出类似于1V的早期夹断。阈值的操作栅极电压接近0 V，并且对于具有MoS 2沟道的n沟道JFET，我们的最高迁移率达到类似于>500 cm（2）/V.s。对于1 V JFET操作，我们观察到的最佳ON/OFF电流比类似于10（4）。
Two-dimensional (2D) transition metal dichalcogenides (TMDs)-based van der Waals (vdW) PN junctions have been used for heterojunction diodes, which basically utilize out-of-plane current across the junction interface. In fact, the same vdW PN junction structure can be utilized for another important device application, junction field effect transistors (JFETs), where in-plane current is possible along with 2D-2D heterojunction interface. Moreover, the 2D TMD-based JFET can use both p- and n-channel for low voltage operation, which might be its unique feature. Here we report vdW JFETs as an in-plane current device with heterojunction between semiconducting p- and n-TMDs. Since this vdW JFET would have low-density traps at the vdW interface unlike 2D TMD-based metal insulator semiconductor field effect transistors (MISFETs), little hysteresis of 0.0-0.1 V and best subthreshold swing of similar to 100 mV/dec were achieved. Easy saturation was observed either from n-channel or p-channel JFET as another advantage over 2D MISFETs, exhibiting early pinch-off at similar to 1 V. Operational gate voltage for threshold was near 0 V and our highest mobility reaches to similar to>500 cm(2)/V.s for n-channel JFET with MoS2 channel. For 1 V JFET operation, our best ON/OFF current ratio was observed to be similar to 10(4).