Observation of oscillating behavior in the reflectance difference spectra of oxidized Si(001) surfaces
Observation of oscillating behavior in the reflectance difference spectra of oxidized Si(001) surfaces
复制标题
氧化Si(001)表面反射差光谱中振荡行为的观察
DOI：
10.1063/1.1452764
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发表时间：
2002
影响因子：
3.2
通讯作者：
M. Ichikawa
中科院分区：
文献类型：
--
作者：
T. Matsudo;T. Ohta;T. Yasuda;M. Nishizawa;N. Miyata;S. Yamasaki;A. Shklyaev;M. Ichikawa
用反射差谱（RD）观察了Si（001）-（2×1）表面的逐层氧化。在RD光谱中出现的独特功能附近的E1（3.3 eV）和E2（4.2 eV）的Si的跃迁能量。随着氧化物厚度增加到4个单层（ML），这些特征的极性反复反转。在氧化过程中，真实的观察到RD振幅在E1跃迁能附近的振荡。振荡的半个周期对应于1 ML的氧化。这些结果证明了原位计数和控制氧化层数量的可能性。
Layer-by-layer oxidation of Si(001)-(2×1) surfaces was observed using the reflectance difference (RD) spectroscopy. Distinctive features in the RD spectra appeared near the E1 (3.3 eV) and E2 (4.2 eV) transition energies of Si. The polarity of these features was repeatedly reversed as the oxide thickness was increased to 4 monolayers (MLs). Oscillation of the RD amplitude near the E1 transition energy was observed in real time during the oxidation process. A half period of the oscillation corresponds to the oxidation of 1 ML. These results demonstrate the possibility of in situ counting and control of the number of oxidized layers.