PROPERTIES OF THE ORGANIC-ON-INORGANIC SEMICONDUCTOR BARRIER CONTACT DIODES IN/PTCDI/P-SI AND AG/CUPC/P-SI
PROPERTIES OF THE ORGANIC-ON-INORGANIC SEMICONDUCTOR BARRIER CONTACT DIODES IN/PTCDI/P-SI AND AG/CUPC/P-SI
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DOI：
10.1002/pssa.2211250138
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发表时间：
1991-05-16
期刊：
影响因子：
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通讯作者：
GOGONEA, S
中科院分区：
文献类型：
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作者：
ANTOHE, S;TOMOZEIU, N;GOGONEA, S
讨论了有机 - 无机（OI）半导体接触势垒二极管的特性，其中3,4,9,10 - 苝四羧酸二酰亚胺（PTCDI）和铜酞菁（CuPc）用作有机薄膜。所呈现的结果可以根据为具有典型芳香族化合物（3,4,9,10 - 苝四羧酸二酐（PTCDA）气相沉积在n型和p型硅衬底上的OI结构引入的热电子发射 - 空间电荷限制（TE - SCL）电流模型来充分理解。此外，在中等和高反向偏压下，所得结果可以根据有机 - 无机异质结（OI - HJ）模型来理解。对二极管性能和理论进行了比较。接触势垒二极管表现出高击穿电压，并且反向暗电流受硅体内载流子的产生和复合所限制。从几个温度下的正向电流 - 电压特性来看，对于PTCDI，形成的表观OI接触势垒为Φbp =（0.63±0.01）V，对于CuPc，与p型硅衬底形成的表观OI接触势垒为Φbp =（0.59±0.02）V。对I - U特性的研究表明，在所使用的有机半导体的带隙中存在指数陷阱分布。由于接触势垒增强且边缘效应减小，所得二极管在许多方面优于传统的肖特基二极管。
The properties are discussed of organic-on-inorganic (OI) semiconductor contact barrier diodes, where the 3, 4, 9, 10 perylenetetracarboxylic diimide (PTCDI) and the copper phthalocyanine (CuPc) serve as the organic thin film. The results presented can be fully understood in terms of the thermionic emission-space-charge-limited (TE-SCL) current model introduced for OI structures with prototypical aromatic compound; 3, 4, 9, 10 perylenetetracarboxylic dianhydride (PTCDA) vapour-deposited onto n- and p-Si substrates. Also, under moderate and high reverse bias voltages the results obtained can be understood in terms of the organic-on-inorganic heterojunction (OI-HJ) model. Comparisons between diode performances and theory are made. The contact barrier diodes exhibit high breakdown voltages and reverse dark currents limited by generation and recombination of carriers in the Si bulk. From the forward current-voltage characteristics at several temperatures, apparent OI contact barriers of PHI-bp = (0.63 +/- 0.01) V for PTCDI and PHI-bp = (0.59 +/- 0.02) V for CuPc, are formed with p-Si substrates. Studies of the I-U characteristics suggest the presence of an exponential trap distribution in the band-gap of the organic semiconductors used. The resulting diodes are superior in many respect to conventional Schottky diodes due to enhanced contact barriers and reduced edge effects.