High Dynamic Range THz Systems using ErAs:In(Al)GaAs Photoconductors
High Dynamic Range THz Systems using ErAs:In(Al)GaAs Photoconductors
复制标题
使用 ErAs:In(Al)GaAs 光电导体的高动态范围 THz 系统
DOI：
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
S. Preu
中科院分区：
文献类型：
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作者：
U. Nandi;F. R. Faridi;A. F. Olvera;J. Norman;Hong Lu;A. Gossard;S. Preu
This paper reviews progress on ErAs:In(Al)GaAs photomixers for operation with telecom lasers at 1550 nm, including linearity and absorption coefficient measurements, specifications, packaging example, and applications in vector spectrometry. We have achieved a receiver noise equivalent power as low as 1.81 fW/Hz at 188 GHz under continuous-wave operation and a bandwidth of more than 6 THz and a peak dynamic range of 89 dB under pulsed operation.
影响因子：
3.8
作者：
M. F. Hermelo;Po-Tsong Boris Shih;M. Steeg;A. Ng'oma;A. Stöhr
通讯作者：
M. F. Hermelo;Po-Tsong Boris Shih;M. Steeg;A. Ng'oma;A. Stöhr