Modified spontaneous-emission rate in an inverted-opal structure with complete photonic bandgap
Modified spontaneous-emission rate in an inverted-opal structure with complete photonic bandgap
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DOI：
10.1364/josab.19.003013
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发表时间：
2002-12
影响因子：
1.9
通讯作者：
C. Hermann;O. Hess
中科院分区：
文献类型：
--
作者：
C. Hermann;O. Hess
一个有限的三维光子晶体结构与一个完整的光子带隙被示出大幅修改的自发发射率的嵌入偶极子。计算的基础上的时域有限差分法与完全匹配的层边界条件表现出很强的位置和极化依赖性的自发辐射的单位细胞内。强增强效应的高指数和低指数材料之间的界面处的预测。带隙内的自发辐射的抑制是两个数量级的顺序，即使是相对较小的微晶。
A finite three-dimensional photonic-crystal structure with a complete photonic bandgap is shown to drastically modify the spontaneous-emission rate of an embedded dipole. Calculations on the basis of the finite-difference time-domain method with perfectly matched layer boundary conditions demonstrate a strong position and polarization dependence of spontaneous emission within the unit cell. Strong enhancement effects are predicted at interfaces between the high-index and the low-index material. The inhibition of spontaneous emission within the bandgap is of the order of two magnitudes, even for relatively small crystallites.