Recent progress in the development of backplane thin film transistors for information displays
Recent progress in the development of backplane thin film transistors for information displays
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DOI：
10.1080/15980316.2023.2219030
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发表时间：
2023-06
影响因子：
3.7
通讯作者：
Gwon Byeon;S. Jang;Tae-Moo Roh;Ji‐Min Park;Hyunsook Kim;Yong‐Young Noh
中科院分区：
文献类型：
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作者：
Gwon Byeon;S. Jang;Tae-Moo Roh;Ji‐Min Park;Hyunsook Kim;Yong‐Young Noh
本综述旨在提供技术路线图，并概述用于有机发光二极管平板显示器和下一代柔性显示器的背板薄膜晶体管（TFT）开发的最新进展。在引言中，我们概述了背板 TFT 的研究趋势。主要内容介绍了非晶金属氧化物半导体、金属卤化物钙钛矿、二维过渡金属二硫化物TFT的当前技术水平和前景。结论部分提供了总结和展望。
This review aims to provide a technical roadmap and an overview of recent progress in the development of backplane thin film transistors (TFTs) for organic light-emitting diodes flat panel displays and next-generation flexible displays. In the introduction, we provide a general overview of the research trends for backplane TFTs. The main part describes the current technical level and prospects for amorphous metal oxide semiconducting, metal halide perovskites, and 2D transition metal dichalcogenides TFTs. The summary and prospects are provided in the conclusion section.