Novel High-Density Microwave Plasma Utilizing an Internal Spoke Antenna for Fast Deposition of Microcrystalline Silicon Films
Novel High-Density Microwave Plasma Utilizing an Internal Spoke Antenna for Fast Deposition of Microcrystalline Silicon Films
复制标题
利用内辐条天线的新型高密度微波等离子体快速沉积微晶硅薄膜
DOI：
10.1143/jjap.40.l701
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发表时间：
2001
影响因子：
1.5
通讯作者：
H. Ueyama
中科院分区：
文献类型：
--
作者：
H. Shirai;Koichi Yoshino;Go Ohkawara;H. Ueyama
介绍了一种利用内辐天线的新型高密度低温微波等离子体。使用铝陶瓷涂层辐条天线，不需要石英玻璃板来维持高密度等离子体。因此，等离子体源相当简单。该微波等离子体在直径为22 cm的范围内保持均匀状态，电子密度高达1011 cm-3，温度低至1-3 eV，微波功率到腔室的传输效率高于外腔。在低功率条件下，SiH4和H2形成高结晶微晶硅（µc-Si:H）的沉积速率可达~ 40 Å/s。这种高密度微波等离子体利用一个内部辐条天线有很大的潜力，更大面积的薄膜加工。
Novel high-density and low-temperature microwave plasma utilizing an internal spoke antenna is demonstrated. No quartz glass plate is required to maintain a high-density plasma using the alumina-ceramic-coated spoke antenna. Consequently, the plasma source is fairly simple. This microwave plasma maintains the uniform state over a diameter of 22 cm with a high electron density of 1011 cm-3 and a low temperature of 1–3 eV as well as a higher traveling efficiency of the microwave power to the chamber than that of the external one. A fast deposition rate of ∼ 40 Å/s is achieved for highly crystallized microcrystalline silicon (µc-Si:H) formation from SiH4 and H2 under lower-power-supply conditions. This high-density microwave plasma utilizing an internal spoke antenna has a high potential for larger-area thin film processing.