AN ANALYSIS OF FIELD-INDUCED HOT-ELECTRON EMISSION FROM METAL-INSULATOR MICROSTRUCTURES ON BROAD-AREA HIGH-VOLTAGE ELECTRODES
AN ANALYSIS OF FIELD-INDUCED HOT-ELECTRON EMISSION FROM METAL-INSULATOR MICROSTRUCTURES ON BROAD-AREA HIGH-VOLTAGE ELECTRODES
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DOI：
10.1098/rspa.1986.0013
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发表时间：
1986-02-08
期刊：
影响因子：
--
通讯作者：
LATHAM, RV
中科院分区：
文献类型：
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作者：
BAYLISS, KH;LATHAM, RV
各个微观位点的高分辨率电子能量分布测量已用于开发场致热电子发射机制的详细理论模型，该机制负责 10-30 MV m-1 真空间隙场中的预击穿电流。该模型基于金属-绝缘体-真空 (m. i. v.) 微发射体系中导电通道的形成，为电流-电压特性、光谱形状以及光谱半峰全宽 (f. w. h. m.) 和位移的场依赖性提供了经过实验验证的定量关系。
High-resolution electron energy distribution measurements of individual microscopic sites have been used to develop a detailed theoretical model of the field-induced hot-electron emission mechanism responsible for pre-breakdown currents at vacuum-gap fields of 10-30 MV m-1. The model, which is based on the formation of conducting channels in a metal-insulator-vacuum (m. i. v.) micro-emission régime, has provided experimentally verified quantitative relations for the current-voltage characteristic, spectral shape, and the field-dependence of the spectral full width at half maximum (f. w. h. m.) and shift.