Simulations of Scatterometry Down to 22 nm Structure Sizes and Beyond with Special Emphasis on LER
Simulations of Scatterometry Down to 22 nm Structure Sizes and Beyond with Special Emphasis on LER
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对小至 22 nm 及以上结构尺寸的散射测量进行模拟，特别强调 LER
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发表时间：
2009
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影响因子：
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通讯作者：
H. Bloess
中科院分区：
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作者：
W. Osten;V. F. Paz;K. Frenner;T. Schuster;H. Bloess
近年来，散射测量已成为CD计量最常用的方法之一。随着未来技术节点的结构尺寸的减小，寻找优化的散射测量配置以利用最大灵敏度变得更加重要。由于广泛的工业散射测量工具主要仍然使用预设的测量配置，因此仍然存在用于提高灵敏度的自由参数。我们目前的工作使用基于模拟的方法来预测和优化未来技术节点的灵敏度。由于线边缘粗糙度对于这样的小结构越来越重要，因此不能忽略周期性延续的这些缺陷。使用傅立叶方法，例如严格耦合波方法（RCWA）用于衍射演算，非周期性特征难以达到。我们表明，在这一领域中，某些类型的fieldstitching方法表现出良好的数值行为，并导致有用的结果。
In recent years, scatterometry has become one of the most commonly used methods for CD metrology. With decreasing structure size for future technology nodes, the search for optimized scatterometry measurement configurations gets more important to exploit maximum sensitivity. As widespread industrial scatterometry tools mainly still use a pre‐set measurement configuration, there are still free parameters to improve sensitivity. Our current work uses a simulation based approach to predict and optimize sensitivity of future technology nodes. Since line edge roughness is getting important for such small structures, these imperfections of the periodic continuation cannot be neglected. Using fourier methods like e.g. rigorous coupled wave approach (RCWA) for diffraction calculus, nonperiodic features are hard to reach. We show that in this field certain types of fieldstitching methods show nice numerical behaviour and lead to useful results.