Organic single-crystal light-emitting field-effect transistors
Organic single-crystal light-emitting field-effect transistors
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DOI：
10.1039/c3tc31998a
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发表时间：
2014-01-01
影响因子：
6.4
通讯作者：
Iwasa, Yoshihiro
中科院分区：
文献类型：
--
作者：
Hotta, Shu;Yamao, Takeshi;Iwasa, Yoshihiro
单晶的生长和表征是材料科学的一个重要领域。在这篇专题文章中，我们概述了有机单晶发光场效应晶体管（osclefet）的特性。内容包括有机半导体的单晶生长及其在晶体管器件中的应用。首先，我们描述了各种单晶生长方法，产生不同的晶体形态和几何形状。利用这些单晶，我们突出了器件的结构和性能。单晶方法不仅使我们能够研究反映有机半导体固有性质的器件性能，而且有利于提高器件的稳定运行。在电子器件结构中实现电流注入激光振荡仍然是一个巨大的挑战。在这种情况下，我们简要地提到频谱狭窄的发射以及光放大的可能性在osclefet。
Growth and characterisation of single crystals constitute a major field of materials science. In this feature article we overview the characteristics of organic single-crystal light-emitting field-effect transistors (OSCLEFETs). The contents include the single crystal growth of organic semiconductors and their application to transistor devices. First, we describe various single crystal growth methods that produce different morphologies and geometries of crystals. Using these single crystals we highlight construction and performance of the devices. The single crystal approach not only allows us to study the device performance that reflects the intrinsic nature of the organic semiconductors but also is advantageous to enhancement in the steady device operation. A current-injected laser oscillation in an electronic device configuration remains as a big challenge to be achieved. In this context we briefly mention the spectrally narrowed emissions as well as the possibility of light amplification in the OSCLEFETs.