Dielectric and microwave properties of barium strontium titanate (BST) thick films on alumina substrates
Dielectric and microwave properties of barium strontium titanate (BST) thick films on alumina substrates
复制标题
DOI：
10.1016/s0955-2219(03)00171-7
复制
发表时间：
2003
影响因子：
5.7
通讯作者：
B. Su;J. Holmes;C. Meggs;T. Button
中科院分区：
文献类型：
--
作者：
B. Su;J. Holmes;C. Meggs;T. Button
研究了氧化铝基钛酸锶钡（BST）厚膜的介电和微波性能。将BST膜丝网印刷并在低于1300 °C的温度下烧结。在低于居里点的温度下，BST薄膜在2 kV/mm的直流偏置场下表现出15-35%的可调谐性。介电损耗主要取决于薄膜厚度，较厚的薄膜（>100 μm）具有较低的损耗（<10−2）。一个松弛过程似乎发生在MHz到GHz的频率制度的BST薄膜。介电常数随偏置场的变化在铁电区和顺电区都表现出滞后行为。这被认为是由于膜中的不均匀组成和微/纳米极性相的存在而引起的。
The dielectric and microwave properties of barium strontium titanate (BST) thick films on alumina substrates have been investigated. The BST films were screen printed and sintered at temperatures below 1300 °C. At temperatures below the Curie point the BST films exhibit tunability in the range 15–35% under a DC bias field of 2 kV/mm. The dielectric loss is critically dependent on film thickness with lower losses (<10−2) for the thicker films (>100 μm). A relaxation process appears to take place for the BST films in the MHz to GHz frequency regime. The variation of permittivity with bias field exhibits hysteretic behaviour in both the ferroelectric and paraelectric regions. This is believed to arise due to the non-uniform composition and existence of micro/nano-polar phases in the films.