Modeling Mechanism and Growth Reactions for New Nanofabrication Processes by Atomic Layer Deposition
Modeling Mechanism and Growth Reactions for New Nanofabrication Processes by Atomic Layer Deposition
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DOI：
10.1002/adma.201504043
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发表时间：
2016-07-20
影响因子：
29.4
通讯作者：
Fomengia, Glen N.
中科院分区：
文献类型：
--
作者：
Elliott, Simon D.;Dey, Gangotri;Fomengia, Glen N.
介绍了氧化铝、二氧化硅和金属铜等重要材料原子层沉积（ALD）化学模拟的最新进展。利用密度泛函理论研究了前体在基底上的自限制化学吸附，以确定反应途径和辅助工艺开发。概述了ALD建模未来面临的主要挑战。
Recent progress in the simulation of the chemistry of atomic layer deposition (ALD) is presented for technologically important materials such as alumina, silica, and copper metal. Self-limiting chemisorption of precursors onto substrates is studied using density functional theory so as to determine reaction pathways and aid process development. The main challenges for the future of ALD modeling are outlined.