Nanoimprint Lithography for High-Efficiency Thin-Film Silicon Solar Cells
Nanoimprint Lithography for High-Efficiency Thin-Film Silicon Solar Cells
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DOI：
10.1021/nl1037787
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发表时间：
2011-02-01
期刊：
影响因子：
10.8
通讯作者：
Ballif, Christophe
中科院分区：
文献类型：
--
作者：
Battaglia, Corsin;Escarre, Jordi;Ballif, Christophe
我们展示了高效率的薄膜硅太阳能电池与透明的纳米织构的前电极通过紫外纳米压印光刻在玻璃基板上。通过复制最先进的纳米纹理氧化锌前电极的形态，以其出色的光捕获特性而闻名，微晶型串联结电池的转换效率高达12.0%。对于厚度仅为250和1100 nm的非晶顶部电池和微晶底部电池，出色的光耦合导致显著的25.9 mA/cm（2）的总短路电流密度。随着最大限度地收集光的努力的继续，我们的研究验证了纳米压印作为一种多功能的工具，以调查纳米光子效应的各种纳米结构直接对器件性能
We demonstrate high-efficiency thin-film silicon solar cells with transparent nanotextured front electrodes fabricated via ultraviolet nanoimprint lithography on glass substrates. By replicating the morphology of state-of-the-art nanotextured zinc oxide front electrodes known for their exceptional light trapping properties, conversion efficiencies of up to 12.0% are achieved for micromorph tandem junction cells.-Excellent light incoupling results in a remarkable summed short-circuit current density of 25.9 mA/cm(2) for amorphous top cell and microcrystalline bottom cell thicknesses of only 250 and 1100 nm, respectively. As efforts to maximize light harvesting continue, our study validates nanoimprinting as a versatile tool to investigate nanophotonic effects of a large variety of nanostructures directly on device performance