Experimental investigation on materials removal mechanism during grinding silicon carbide ceramics with single diamond grain
Experimental investigation on materials removal mechanism during grinding silicon carbide ceramics with single diamond grain
复制标题
DOI：
10.1016/j.precisioneng.2017.08.019
复制
发表时间：
2018
影响因子：
3.6
通讯作者：
J. Dai;H. Su;Teng-Shiang Yu;Hao Hu;Wenbo Zhou;W. Ding
中科院分区：
文献类型：
--
作者：
J. Dai;H. Su;Teng-Shiang Yu;Hao Hu;Wenbo Zhou;W. Ding
设计了固定转速比s/vw的单颗粒磨削实验，研究了砂轮转速升高时，磨削速度和未变形切屑厚度（UCT）对SiC材料去除机理的影响。在磨削速度为20 ~ 160 m/s、最大UCTagmax为0.02 ~ 3 μm的条件下，测量了磨削表面和亚表面形貌、磨削力和比能。结果表明，磨削力和比磨削能随磨削速度的增加而呈明显下降趋势，但agmax值保持在0.03、1 μm。而当agmax = 0.3 μm时，磨削力随着砂轮转速的增加而出现峰值。地下也有同样的趋势。根据亚表面形貌、磨削力和磨削能，确定了临界砂轮速度svs = 100、80、80 m/s时，最大磨削力分别为0.03、0.3、1 μm。此外，由于材料去除机制的转变，在典型磨削速度下，磨削力随agmax的逐渐增大在三个阶段呈现出不同的增长速率。根据表面和亚表面形貌、磨削力和磨削能量，确定了韧脆转变和脆性区开始磨削的临界最大值分别为0.3和1 μm。
A single grain grinding experiment with fixed speed ratiovs/vwwas designed to decouple the effect of grinding speed and undeformed chip thickness (UCT) on the SiC material removal mechanism during elevating the grinding wheel speed. Ground surface and subsurface topography, grinding forces, and specific energy were measured with grinding speed ranging from 20 to 160 m/s and maximum UCTagmaxfrom 0.02 to 3 μm. The results demonstrated the grinding force and specific grinding energy show an evident decreased tendency with the increasing of grinding speed, despite theagmaxvalue was kept at 0.03, 1 μm. However, atagmax= 0.3 μm, the grinding force has a peak value with the increment of grinding wheel speed. The subsurface has the same trend. Based on the subsurface morphologies, grinding forces, grinding energy, the critical grinding wheel speedsvs= 100, 80, 80 m/s were determined at theagmax= 0.03, 0.3, 1 μm, respectively. Besides, grinding forces show different growth rates with the gradually increasingagmaxat three stages under typical grinding speeds due to the transition of material removal mechanism. The criticalagmaxvalues for ductile-brittle transition and beginning of brittle regime grinding are determined as 0.3 and 1 μm by surface and subsurface morphologies, grinding forces, grinding energy, respectively.