Unintentional doping and compensation effects of carbon in metal-organic chemical-vapor deposition fabricated ZnO thin films
Unintentional doping and compensation effects of carbon in metal-organic chemical-vapor deposition fabricated ZnO thin films
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DOI：
10.1116/1.2167981
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发表时间：
2006-06
期刊：
影响因子：
--
通讯作者：
Xiaonan Li;S. Asher;S. Limpijumnong;Shengbai Zhang;S. Wei;T. Barnes;T. Coutts;R. Noufi
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文献类型：
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作者：
Xiaonan Li;S. Asher;S. Limpijumnong;Shengbai Zhang;S. Wei;T. Barnes;T. Coutts;R. Noufi
碳是金属有机化学气相沉积（MOCVD）制备的薄膜中的典型杂质。实验和理论研究了碳在未掺杂和氮掺杂ZnO薄膜中的作用，以了解可能的补偿效应。ZnO薄膜是通过低压MOCVD使用二乙基锌，一氧化氮（用于氮掺杂的薄膜），或氧前体（用于未掺杂的薄膜）。与传统的ZnO薄膜相比，MOCVD制备的ZnO薄膜中的碳浓度非常高。此外，MOCVD制造的ZnO：N膜具有比未掺杂的ZnO更高的碳浓度。考虑到先前通过傅里叶变换红外光谱和X射线光电子能谱观察到的信号，有可能掺入的碳已经与掺杂的氮形成络合物。第一性原理计算预测，碳间隙（Ci）的形成能相对较高。然而，由于C之间的结合能很大，
Carbon is a typical impurity in thin films fabricated by metal-organic chemical-vapor deposition (MOCVD). The role of carbon in undoped and nitrogen-doped ZnO thin films was studied experimentally and theoretically to understand the possible compensation effects. ZnO thin films are fabricated by low-pressure MOCVD using diethylzinc, nitric oxide (for nitrogen-doped films), or oxygen precursors (for undoped films). Compared with sputtering-fabricated ZnO film, the carbon concentration in the MOCVD-fabricated ZnO film is very high. Furthermore, the MOCVD-fabricated ZnO:N film has an even higher carbon concentration than the undoped ZnO. Considering the signal observed previously by Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy, it is possible that the incorporated carbon has formed complexes with doped nitrogen. The first-principles calculations predict that the formation energy for carbon interstitial (Ci) is relatively high. However, due to the large binding energy between C...