Semiconductor neutron detectors using depleted uranium oxide
Semiconductor neutron detectors using depleted uranium oxide
复制标题
使用贫铀氧化物的半导体中子探测器
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
Jerrad P. Auxier
中科院分区：
文献类型：
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作者：
C. Kruschwitz;S. Mukhopadhyay;D. Schwellenbach;T. Meek;B. Shaver;T. Cunningham;Jerrad P. Auxier
本文报告了最近开发和测试由铀化合物制成的新型固态中子探测器的尝试。多年来，人们已经知道氧化铀 (UO2)、八氧化三铀 (U3O8) 和其他铀化合物表现出半导体特性，并具有广泛的电性能。我们寻求利用这些特性来制造直接转换半导体中子探测器。在这样的装置中，中子与铀核相互作用，引发裂变。裂变产物沉积产生能量、可检测的电子空穴对。裂变反应中释放的高能量表明这种装置的噪声辨别能力具有出色的潜力。肖特基器件是使用化学沉积涂层技术在蓝宝石基板上沉积几微米厚的 UO2 层来制造的。肖特基器件也使用约 500 微米厚的 UO2 样品单晶制成。使用 GEANT4 进行了中子敏感性模拟。使用 252Cf 源对肖特基器件的中子灵敏度进行了实验测试。
This paper reports on recent attempts to develop and test a new type of solid-state neutron detector fabricated from uranium compounds. It has been known for many years that uranium oxide (UO2), triuranium octoxide (U3O8) and other uranium compounds exhibit semiconducting characteristics with a broad range of electrical properties. We seek to exploit these characteristics to make a direct-conversion semiconductor neutron detector. In such a device a neutron interacts with a uranium nucleus, inducing fission. The fission products deposit energy-producing, detectable electron-hole pairs. The high energy released in the fission reaction indicates that noise discrimination in such a device has the potential to be excellent. Schottky devices were fabricated using a chemical deposition coating technique to deposit UO2 layers a few microns thick on a sapphire substrate. Schottky devices have also been made using a single crystal from UO2 samples approximately 500 microns thick. Neutron sensitivity simulations have been performed using GEANT4. Neutron sensitivity for the Schottky devices was tested experimentally using a 252Cf source.