Mechanism of electron beam poled SHG in 0.95GeS2·0.05In2S3 chalcogenide glasses
Mechanism of electron beam poled SHG in 0.95GeS2·0.05In2S3 chalcogenide glasses
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DOI：
10.1016/j.jpcs.2006.10.002
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发表时间：
2007-02
影响因子：
4
通讯作者：
G. Dong;H. Tao;Xiudi Xiao;Changgui Lin;Xiujian Zhao;S. Mao
中科院分区：
文献类型：
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作者：
G. Dong;H. Tao;Xiudi Xiao;Changgui Lin;Xiujian Zhao;S. Mao
利用Maker条纹法，在0.95GeS2·0.05In2S3硫系玻璃中观察到电子束辐照产生的二次谐波，其强度随束流从15 nA增加到25 nA而增加。根据制备态和辐照态的拉曼光谱，没有发现明显的微观结构转变，本文建立了内置电荷模型来解释电子束辐照的极化机制，二次电子和俄歇电子的发射导致形成正区，吸收的电子形成负区。正区位于极化表面附近，负区比正区深得多。在0.95GeS2·0.05In2S3玻璃的两个相反电荷区之间，产生了一个强的空间电荷静电场Edc，导致了非零的χ（2）。背散射电子的发射对Edc的形成没有贡献。
Utilizing the Maker fringe method, SHG was observed in the 0.95GeS2·0.05In2S3chalcogenide glass irradiated by the electron beam and the intensity of SH increases with the enhancement of beam current from 15 to 25nA. According to Raman spectra of the as-prepared and the irradiated one, no distinct micro-structural transformation was found. In this work, the built-in charge model was founded to interpret the poling mechanism of electron beam irradiation, the emission of the secondary electrons and Auger electrons results in the formation of positive region and the absorbed electrons form negative region. The positive region was situated near the poling surface, and the negative region was much deeper than the positive region. Between the two opposite charged regions, a strong space-charge electrostatic field, Edc, is created, which leads to the nonzero χ(2)in the 0.95GeS2·0.05In2S3glass. The emission of backscattered electrons does no contribution to the formation of Edc.