High-Voltage Rectifier Diodes Used as Photoconductive Device for Microwave Pulse Generation
High-Voltage Rectifier Diodes Used as Photoconductive Device for Microwave Pulse Generation
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DOI：
10.1109/tps.2006.883403
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发表时间：
2006-10
影响因子：
1.5
通讯作者：
B. Vergne;V. Couderc;A. Barthélémy;D. Gontier;M. Lalande;V. Bertrand
中科院分区：
文献类型：
--
作者：
B. Vergne;V. Couderc;A. Barthélémy;D. Gontier;M. Lalande;V. Bertrand
利用高压和中压硅整流二极管实现了单极性和双极性脉冲的产生。这些组件由法国原子能委员会（CEA）提供。此外，这些器件工作在光电导开关的线性模式下。产生的电单极脉冲的幅度为10.7千伏和半高全宽为300 ps，仅使用1.2毫焦耳的光功率证明。这个能量值比过去几十年通常公布的能量值低10-100倍。此外，这些器件的线性模式运行允许以低至2 ps的精度同步多个发生器。这种低定时抖动对于双极发生器是有用的，以便以高精度控制它们的频谱，即，产生了3 kV峰峰值的双极脉冲，周期持续时间为400 ps，光能为1 mJ
Generation of unipolar and bipolar pulses by using high- and medium-voltage silicon rectifier diodes is achieved. These components are provided by the French Atomic Energy Commission (CEA). Furthermore, these devices work in the linear mode of photoconducting switches. Generation of electrical unipolar pulses with an amplitude of 10.7 kV and a full-width at half-maximum of 300 ps by using only 1.2 mJ of optical power is demonstrated. This energy value is 10-100 times less than usually published during the past decades. Furthermore, the linear mode running of these devices permits to synchronize several generators with a precision as low as 2 ps. This low timing jitter is useful for bipolar generators in order to control their spectrum with high precision, i.e., bipolar pulses of 3 kV peak-to-peak have been generated with a cycle duration of 400 ps and an optical energy of 1 mJ