A three-stage cascaded distributed amplifier with GBW exceeding 1.5THz
A three-stage cascaded distributed amplifier with GBW exceeding 1.5THz
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GBW超过1.5THz的三级级联分布式放大器
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
A. Niknejad
中科院分区：
文献类型：
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作者：
A. Arbabian;A. Niknejad
采用0.13μ mSiGeBiCMOS工艺设计了一个三级级联的分布式放大器。通过优化放大器在架构和元件水平，一个非常大的测量增益带宽积超过1.5THz。核心放大器在3.3V电源下功耗为75mA，在15GHz至至少110GHz（受设备带宽限制）范围内提供24dB的平均增益。采用分布式射频扼流圈设计，为三个级联级提供偏置电流。通带增益保持在23和26.5dB之间。
A three-stage cascaded distributed amplifier is designed in a 0.13μm SiGe BiCMOS process. By optimizing the amplifier both at the architecture and element level, an extremely large measured gain-bandwidth product in excess of 1.5THz is obtained. The core amplifier consumes 75mA from a 3.3V supply and provides an average gain of 24dB from 15GHz to at least 110GHz (limited by equipment BW). A distributed RF-choke design is employed to provide the bias current to the three cascaded stages. The pass-band gain stays between 23 and 26.5dB.