Coupling Two-Dimensional MoTe2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters.
Coupling Two-Dimensional MoTe2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters.
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DOI：
10.1021/acsami.7b02838
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发表时间：
2017-04
影响因子：
9.5
通讯作者：
Han Sol Lee;Kyunghee Choi;Jin Sung Kim;Sanghyuck Yu;Kyeong Rok Ko;S. Im
中科院分区：
文献类型：
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作者：
Han Sol Lee;Kyunghee Choi;Jin Sung Kim;Sanghyuck Yu;Kyeong Rok Ko;S. Im
我们报道了混合PN结二极管和互补（CMOS）逆变器的制造，其中二维p型MoTe2和n型薄膜InGaZnO （IGZO）在每个器件工艺中耦合。IGZO薄膜最初是用传统的光刻技术在PN二极管中的n型材料或CMOS逆变器中的n沟道顶栅场效应晶体管（FET）中进行图像化的。该杂化PN结二极管具有良好的理想因数1.57和相当高的ON/OFF整流比（~ 3 × 104）。在光子作用下，我们的混合PN二极管只对蓝色和紫外线的高能光子有一定的反应。我们的2D纳米片-氧化膜混合CMOS逆变器在5 V时电压增益高达~ 40，在1 V时功耗低于几nW，开关动态为~ 200 μs。
We report the fabrication of hybrid PN junction diode and complementary (CMOS) inverters, where 2D p-type MoTe2 and n-type thin film InGaZnO (IGZO) are coupled for each device process. IGZO thin film was initially patterned by conventional photolithography either for n-type material in a PN diode or for n-channel of top-gate field-effect transistors (FET) in CMOS inverter. The hybrid PN junction diode shows a good ideality factor of 1.57 and quite a high ON/OFF rectification ratio of ∼3 × 104. Under photons, our hybrid PN diode appeared somewhat stable only responding to high-energy photons of blue and ultraviolet. Our 2D nanosheet-oxide film hybrid CMOS inverter exhibits voltage gains as high as ∼40 at 5 V, low power consumption less than around a few nW at 1 V, and ∼200 μs switching dynamics.